INVESTIGATION OF SINGLE-EVENT UPSET (SEU) IN AN ADVANCED BIPOLAR PROCESS

被引：8

作者：

ZOUTENDYK, JA ^{[1
]}

SECREST, EC ^{[1
]}

BERNDT, DF ^{[1
]}

机构：

[1] HONEYWELL INC,SYST & RES CTR,MINNEAPOLIS,MN 55418

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

D O I：

10.1109/23.25500

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1573 / 1577

页数：5

共 6 条

[1] CHARGE COLLECTION IN BIPOLAR-TRANSISTORS [J].

KNUDSON, AR ;

CAMPBELL, AB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1246-1250

[2] PHYSICAL SEU MODEL FOR CIRCUIT SIMULATIONS [J].

PECZALSKI, A ;

BERGMAN, J ;

BERNDT, D ;

LAI, JC .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1591-1595

[3] TRANSIENT MEASUREMENTS OF ULTRAFAST CHARGE COLLECTION IN SEMICONDUCTOR DIODES [J].

WAGNER, RS ;

BRADLEY, JM ;

BORDES, N ;

MAGGIORE, CJ ;

SINHA, DN ;

HAMMOND, RB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1240-1245

[4] EXPERIMENTAL-EVIDENCE FOR A NEW SINGLE-EVENT UPSET (SEU) MODE IN A CMOS SRAM OBTAINED FROM MODEL VERIFICATION [J].

ZOUTENDYK, JA ;

SMITH, LS ;

SOLI, GA ;

LO, RY .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1292-1299

[5] LATERAL CHARGE TRANSPORT FROM HEAVY-ION TRACKS IN INTEGRATED-CIRCUIT CHIPS [J].

ZOUTENDYK, JA ;

SCHWARTZ, HR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1988, 35 (06) :1644-1647

[6] SINGLE-EVENT UPSET (SEU) MODEL VERIFICATION AND THRESHOLD DETERMINATION USING HEAVY-IONS IN A BIPOLAR STATIC RAM [J].

ZOUTENDYK, JA ;

SMITH, LS ;

SOLI, GA ;

THIEBERGER, P ;

WEGNER, HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4164-4169

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