CHARGE COLLECTION IN BIPOLAR-TRANSISTORS

被引：8

作者：

KNUDSON, AR

CAMPBELL, AB

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337460

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1246 / 1250

页数：5

共 9 条

[1] CHARGE COLLECTION MEASUREMENTS FOR ENERGETIC IONS IN SILICON [J].

CAMPBELL, AB ;

KNUDSON, AR .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (06) :2067-2071

[2] CHARGE COLLECTION IN TEST STRUCTURES [J].

CAMPBELL, AB ;

KNUDSON, AR ;

SHAPIRO, P ;

PATTERSON, DO ;

SEIBERLING, LE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4486-4492

[3] 2-DIMENSIONAL SIMULATION OF SINGLE EVENT INDUCED BIPOLAR CURRENT IN CMOS STRUCTURES [J].

FU, JS ;

AXNESS, CL ;

WEAVER, HT .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1155-1160

[4] ION TRACK SHUNT EFFECTS IN MULTIJUNCTION STRUCTURES [J].

HAUSER, JR ;

DIEHLNAGLE, SE ;

KNUDSON, AR ;

CAMPBELL, AB ;

STAPOR, WJ ;

SHAPIRO, P .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4115-4121

[5] CHARGE COLLECTION IN MULTILAYER STRUCTURES [J].

KNUDSON, AR ;

CAMPBELL, AB ;

SHAPIRO, P ;

STAPOR, WJ ;

WOLICKI, EA ;

PETERSEN, EL ;

DIEHLNAGLE, SE ;

HAUSER, J ;

DRESSENDORFER, PV .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1149-1154

[6] USE OF AN ION MICROBEAM TO STUDY SINGLE EVENT UPSETS IN MICROCIRCUITS [J].

KNUDSON, AR ;

CAMPBELL, AB .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4017-4021

[7] CHARGE TRANSPORT BY THE ION SHUNT EFFECT [J].

KNUDSON, AR ;

CAMPBELL, AB ;

HAUSER, JR ;

JESSEE, M ;

STAPOR, WJ ;

SHAPIRO, P .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1560-1564

[8] SIMULATION OF CHARGE COLLECTION IN A MULTILAYER DEVICE [J].

KRESKOVSKY, JP ;

GRUBIN, HL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4140-4144

[9]

SZE SM, 1981, PHYS SEMICONDUCTOR D, P783

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