LOW-TEMPERATURE ACTIVATION OF IMPURITIES IMPLANTED BY ION DOPING TECHNIQUE FOR POLY-SI THIN-FILM TRANSISTORS

被引：9

作者：

MATSUO, M

NAKAZAWA, T

OHSHIMA, H

机构：

[1] TFT/MIM Research Labarotory, SEIKO EPSON Corporation, Nagano, 392

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

TFTS; POLYSILICON; ION DOPING; ACTIVATION OF IMPURITIES; CRYSTALLINITY; SOLID PHASE CRYSTALLIZATION; HYDROGENATION;

D O I：

10.1143/JJAP.31.4567

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature activation of impurities doped by high-energy non-mass-separated ion doping (I / D) technique has been investigated for fabricating self-aligned Poly-Si thin-film transistors (S/A poly-Si TFTs) at low temperature on large-area glass substrates. Phosphorus atoms implanted by I / D are, surprisingly, activated through 300-degrees-C furnace annealing, and a sufficiently low value of sheet resistance is obtained for very thin film (congruent-to 25 nm) by combining with solid phase crystallization (SPC), which enhances crystallinity of poly-Si films. We have also confirmed excellent electrical properties of S/A poly-Si TFTs by using these techniques.

引用

页码：4567 / 4569

页数：3

共 7 条

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