IMPROVEMENT OF THE HIGH-TEMPERATURE PERFORMANCE OF 1.3-MU-M BURIED HETEROSTRUCTURE LASERS BY THE USE OF AN ALLNAS LAYER TO LIMIT CURRENT LEAKAGE

The high-temperature performance of 1.3 mum buried heterostructure lasers has been improved to such an extent that they would be suitable for operation without a Peltier cooler. Formation of the hybrid structure used to realize the improvement utilized both metal-organic vapour-phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) growth techniques. A resistive, undoped AlInAs layer grown by MBE was incorporated into the laser structure in order to reduce current leakage around the laser active region. The laser performance was found to be better than that predicted from theoretical considerations.