SUPPRESSION OF LEAKAGE CURRENT IN INGAASP/INP BURIED HETEROSTRUCTURE LASERS BY INAIAS STRAINED CURRENT-BLOCKING LAYERS

被引：8

作者：

OHTOSHI, T

CHINONE, N

机构：

[1] Central Research Laboratory, Hitachi Ltd, Hitachi Ltd, Kokubunji, Tokyo

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 01期

关键词：

SEMICONDUCTOR LASERS; LASERS; LIGHT SOURCES;

D O I：

10.1049/el:19910008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAsP/InP buried heterostructure (BH) lasers with InAlAs strained current-blocking layers are proposed. For use as a current-blocking material with a bandgap energy larger than that of InP, InAlAs is superior to InGaP. This is because a wide bandgap can be obtained in the InAlAs without large bandgap shrinkage caused by tensile strain. A two-dimensional simulation shows that the leakage current in BH lasers with thin pnpn blocking layers is suppressed up to 85-degrees-C by employing 100 angstrom In(1-x)Al(x)As (x greater-than-or-equal-to 0.54) layers.

引用

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页码：12 / 13

页数：2

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