NEGATIVE CHARGE STATE OF THE DX CENTER IN ALXGA1-XAS-SI

被引：25

作者：

MOSSER, V

CONTRERAS, S

ROBERT, JL

PIOTRZKOWSKI, R

ZAWADZKI, W

ROCHETTE, JF

机构：

[1] UNIV MONTPELLIER 2,ETUD SEMICOND GRP,F-34095 MONTPELLIER,FRANCE

[2] HIGH PRESSURE RES CTR,WARSAW,POLAND

[3] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.66.1737

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present experimental data for the thermally activated capture of electrons on Si-induced impurity states in Al(x)Ga(1-x)As in the strong-lattice-relaxation regime (DX centers). Experiments have been performed after photoionization in the region of transition from the normal to the metastable state of the defect, using hydrostatic pressure up to 8 kbar. An analysis of the isothermal as well as the thermostimulated capture kinetics strongly supports the hypothesis of the negative charge state of the DX center.

引用

页码：1737 / 1740

页数：4

共 24 条

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