THERMOELECTRIC INFRARED-SENSORS BY CMOS TECHNOLOGY

被引：66

作者：

LENGGENHAGER, R ^{[1
]}

BALTES, H ^{[1
]}

PEER, J ^{[1
]}

FORSTER, M ^{[1
]}

机构：

[1] CERBERUS AG,CH-8708 MANNEDORF,SWITZERLAND

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 09期

关键词：

D O I：

10.1109/55.192792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report two integrated thermoelectric infrared sensors on thin silicon oxide / nitride microstructures realized by industrial CMOS IC technology, followed by one compatible single maskless anisotropic etching step. No additional material is needed to enhance infrared absorption since the passivation layer, as provided by the CMOS process, is sufficient for certain spectral bands. The responsivities are between 12 and 28 V / W.

引用

页码：454 / 456

页数：3

共 11 条

[1] BAER WG, TRANSDUCERS 91, P631
[2] KUHL K, 1991, SENSOR MATER, V2, P247
[3] A BATCH-FABRICATED SILICON THERMOPHILE INFRARED DETECTOR
LAHIJI, GR
WISE, KD
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) : 14 - 22
[4] LEME CA, 1992, IN PRESS MAY IEEE IN
[5] MOSER D, 1990, SENSOR ACTUAT A-PHYS, V21, P1019
[6] MICROMACHINED THERMAL-RADIATION EMITTER FROM A COMMERCIAL CMOS PROCESS
PARAMESWARAN, M
ROBINSON, AM
BLACKBURN, DL
GAITAN, M
GEIST, J
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (02) : 57 - 59
[7] ANISOTROPIC ETCHING OF CRYSTALLINE SILICON IN ALKALINE-SOLUTIONS .1. ORIENTATION DEPENDENCE AND BEHAVIOR OF PASSIVATION LAYERS
SEIDEL, H
CSEPREGI, L
HEUBERGER, A
BAUMGARTEL, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (11) : 3612 - 3626
[8] Van Herwaarden A W, 1989, SENSOR ACTUAT A-PHYS, VA21-A23, P621
[9] THERMAL-CONDUCTIVITY AND DIFFUSIVITY OF A THIN-FILM SIO2-SI3N4 SANDWICH SYSTEM
VOLKLEIN, F
[J]. THIN SOLID FILMS, 1990, 188 (01) : 27 - 33
[10] HIGH-SENSITIVITY RADIATION THERMOPHILES MADE OF BI-SB-TE FILMS
VOLKLEIN, F
WIEGAND, A
BAIER, V
[J]. SENSORS AND ACTUATORS A-PHYSICAL, 1991, 29 (02) : 87 - 91

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