OZONE OXIDATION OF SILICON

被引：15

作者：

KAZOR, A

BOYD, IW

机构：

[1] Electronic & Electrical Engineering, University College London, London WC1E 7JE, Torrington Place

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 01期

关键词：

SILICON; OXIDATION;

D O I：

10.1049/el:19930075

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time the low temperature oxidation of silicon with ozone generated by the barrier discharge method is reported. At 550-degrees-C, some 105 angstrom of SiO2 can be grown in only 30 min, which is a reaction enhancement rate of 750% over conventional growth rates obtained using dry molecular oxygen at the same temperature.

引用

页码：115 / 116

页数：2

共 7 条

[1] STRUCTURE OF ULTRATHIN SILICON DIOXIDE FILMS [J].