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CHARACTERISTICS OF REPULSIVE CENTERS IN SILICON

被引：1
作者：
LEMKE, H
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 02期
关键词：
D O I：
10.1002/pssa.2210660216
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：541 / 549
页数：9
相关论文
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