CHARACTERISTICS OF REPULSIVE CENTERS IN SILICON

被引：1

作者：

LEMKE, H

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 02期

关键词：

D O I：

10.1002/pssa.2210660216

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：541 / 549

页数：9

共 19 条

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ZHDANOVA NG, 1964, FIZ TVERD TELA, V6, P440

[19]

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