ALGAAS GAAS HBT FOR HIGH-TEMPERATURE APPLICATIONS

被引：24

作者：

FRICKE, K

HARTNAGEL, HL

LEE, WY

WURFL, J

机构：

[1] Technische Hochschule Darmstadt, Institut für Hochfrequenztechnik

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 09期

关键词：

D O I：

10.1109/16.155867

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a high-temperature N-p-n AlGaAs/GaAs HBT with wide-bandgap emitter is presented which can be operated up to a ambient temperature of 350-degrees-C. It is demonstrated that a high Al mole fraction of 0.45 in the emitter in combination with a GaAs base layer yields excellent temperature stability. A useful common-emitter small-signal current gain h(FE) higher than 35 was measured in the range between room temperature and 350-degrees-C.

引用

页码：1977 / 1981

页数：5

共 16 条

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