ALGAAS GAAS HBT FOR HIGH-TEMPERATURE APPLICATIONS

被引:24
作者
FRICKE, K
HARTNAGEL, HL
LEE, WY
WURFL, J
机构
[1] Technische Hochschule Darmstadt, Institut für Hochfrequenztechnik
关键词
D O I
10.1109/16.155867
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper a high-temperature N-p-n AlGaAs/GaAs HBT with wide-bandgap emitter is presented which can be operated up to a ambient temperature of 350-degrees-C. It is demonstrated that a high Al mole fraction of 0.45 in the emitter in combination with a GaAs base layer yields excellent temperature stability. A useful common-emitter small-signal current gain h(FE) higher than 35 was measured in the range between room temperature and 350-degrees-C.
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页码:1977 / 1981
页数:5
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