CHARACTERISTICS OF MOS CAPACITORS OF BF2 OR B-IMPLANTED POLYSILICON GATE WITH AND WITHOUT POCL3 CO-DOPED

被引：6

作者：

HSIEH, JC ^{[1
]}

FANG, YK ^{[1
]}

CHEN, CW ^{[1
]}

TSAI, NS ^{[1
]}

LIN, MS ^{[1
]}

TSENG, FC ^{[1
]}

机构：

[1] TAIWAN SEMICOND MFG CO LTD,HSINCHU,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 05期

关键词：

D O I：

10.1109/55.215174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of BF2 or B implanted polysilicon gate MOS capacitors with and without POCl3 co-doped were studied in this letter. We found that the gate oxide thickness was increased very significantly with the number of high-temperature thermal cycles for BF2 implanted polysilicon MOS capacitors. But this phenomenon will not be found in POCl3 co-doped polysilicon MOS capacitors. A model to interpret this phenomenon well was established according to the results of SIMS measurement.

引用

页码：222 / 224

页数：3

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