SURFACE-DEFECTS, GAP STATES, AND LOW-ENERGY MODES OF DEGENERATELY DOPED N-GAAS(110)

被引：10

作者：

KILDAY, DG

MARGARITONDO, G

LAPEYRE, GJ

机构：

[1] UNIV WISCONSIN,CTR SYNCHROTRON RADIAT,MADISON,WI 53706

[2] MONTANA STATE UNIV,DEPT PHYS,BOZEMAN,MT 59717

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.576662

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We show that information about gap states at semiconductor surfaces and interfaces can be obtained from high-resolution electron energy-loss spectroscopy. This novel approach is based on a careful analysis of low-energy (<0.1 eV) modes, using theoretical spectra derived from a layered spatially dispersive model of the dielectric response. © 1990, American Vacuum Society. All rights reserved.

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收藏

页码：2755 / 2760

页数：6

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