100-GHZ GUNN-DIODES FABRICATED BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

HAYDL, WH

SMITH, S

BOSCH, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 06期

关键词：

D O I：

10.1063/1.91985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：556 / 557

页数：2

共 11 条

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[2]

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[3] GAAS IMPATT DIODES PREPARED BY MOLECULAR-BEAM EPITAXY [J].

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DUNN, CN ;

KUVAS, RL ;

SCHROEDER, WE .

APPLIED PHYSICS LETTERS, 1974, 25 (04) :224-226

[4] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS [J].

CHO, AY ;

DERNIER, PD .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3328-3332

[5] RESONANT-CAP STRUCTURES FOR IMPATT DIODES [J].

GROVES, IS ;

LEWIS, DE .

ELECTRONICS LETTERS, 1972, 8 (04) :98-&

[6]

JOYCE BA, 1977, I PHYS C SER, V32, P17

[7] LOW THRESHOLD CURRENT TRANSVERSE JUNCTION LASERS ON SEMI-INSULATING SUBSTRATES BY MBE [J].

LEE, TP ;

BURRUS, CA ;

CHO, AY .

ELECTRONICS LETTERS, 1980, 16 (13) :510-511

[8]

NARAYAN SY, 1972, RCA REV, V33, P752

[9] LOW-NOISE MILLIMETER-WAVE MIXER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) [J].

SCHNEIDER, MV ;

LINKE, RA ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1977, 31 (03) :219-221

[10]

WOOD CB, UNPUBLISHED

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