ETCHING STUDIES OF IMPURITY PRECIPITATES IN PULLED GAP CRYSTALS

被引：64

作者：

IIZUKA, T

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 07期

关键词：

D O I：

10.1149/1.2408278

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1190 / &

共 35 条

[21]

Nomarski G., 1955, REV MET PARIS, V52, P121, DOI [10.1051/metal/195552020121, DOI 10.1051/METAL/195552020121]

[22] PROPERTIES OF GAP SINGLE CRYSTALS GROWN BY LIQUID ENCAPSULATED PULLING [J].

NYGREN, SF ;

RINGEL, CM ;

VERLEUR, HW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :306-&

[23] DISLOCATIONS IN WEBS OF GERMANIUM + SILICON [J].

OHARA, S .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) :409-&

[24]

PELL EM, 1960, SOLID STATE PHYS, V1, P261

[25] ETCH PITS IN GALLIUM ARSENIDE [J].

RICHARDS, JL ;

CROCKER, AJ .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (03) :611-612

[26] DEFECT STRUCTURE OF GAP CRYSTALS GROWN FROM GALLIUM SOLUTIONS VAPOR PHASE AND LIQUID PHASE EPITAXIAL DEPOSITION [J].

SAUL, RH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (11) :1184-&

[27]

SHESTAKOVA NA, 1964, SOVIET PHYS SOLID ST, V6, P3367

[28]

SHILSHTEIN SS, 1966, SOV PHYS CRYSTALLOGR, V10, P490

[29] DISLOCATION ETCH PITS ON SOLUTION GROWN GALLIUM PHOSPHIDE [J].

SHIRAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (02) :279-&

[30] OBSERVATION OF DISLOCATIONS IN GERMANIUM SINGLE CRYSTAL [J].

SHOJI, M ;

MITSUISHI, T ;

TAUCHI, S ;

TOMONO, M .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1961, 16 (06) :1253-&

← 1 2 3 4 →