LONG-TERM RELIABILITY OF STRAIN-COMPENSATED INGAAS(P)/INP MQW BH LASERS

被引：11

作者：

SELTZER, CP

PERRIN, SD

HARLOW, MJ

STUDD, R

SPURDENS, PC

机构：

[1] BT Laboratories, Martlesham Heath, Ipswich

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 03期

关键词：

SEMICONDUCTOR LASERS; RELIABILITY;

D O I：

10.1049/el:19940150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have grown wafers with 16 zero-net-strain and conventionally strained In0.68Ga00.32As quantum wells and eight strain-compensated In0.34Ga0.16As0.68P0.32 quantum wells. Buried heterostructure lasers were fabricated and reliability studies have been carried out. Initial estimates give lifetimes of around 100 years.

引用

页码：227 / 229

页数：3

共 7 条

[1]

HOUGHTON DC, 1993, P INP RELATED MATERI

[2] STRAIN-COMPENSATED STRAINED-LAYER SUPERLATTICES FOR 1.5-MU-M WAVELENGTH LASERS [J].