MULTI-DAY DYNAMIC STORAGE OF HOLES AT THE ALAS/GAAS INTERFACE

[1] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 200 - 209

[2] REALIZATION OF N-CHANNEL AND P-CHANNEL HIGH-MOBILITY (AL,GA)AS/GAAS HETEROSTRUCTURE INSULATING GATE FETS ON A PLANAR WAFER SURFACE [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 645 - 647

[3] CIRILLO NC, 1985, JUN IEEE DEV RES C B

[4] CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERISTICS OF MOLECULAR-BEAM EPITAXIALLY GROWN P+-GAAS/AIAS/N-GAAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 365 - 366

[5] MODULATION-DOPED (AL,GA)AS/ALAS SUPERLATTICE - ELECTRON-TRANSFER INTO ALAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 284 - 286

[6] SELECTIVELY DOPED HETEROSTRUCTURE FREQUENCY-DIVIDERS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 377 - 379

[7] LINH NT, 1982, DEC IEDM, P582

[8] NICOLLIAN EH, 1982, MOS METAL OXIDE SEMI, P374

[9] PHOTOSENSITIVE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AIGAAS/GAAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 638 - 640

[10] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1015 - 1027

[1] ENERGY-BAND ALIGNMENT IN GAAS - (AL,GA)AS HETEROSTRUCTURES - THE DEPENDENCE ON ALLOY COMPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) : 200 - 209

[2] REALIZATION OF N-CHANNEL AND P-CHANNEL HIGH-MOBILITY (AL,GA)AS/GAAS HETEROSTRUCTURE INSULATING GATE FETS ON A PLANAR WAFER SURFACE [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 645 - 647

[3] CIRILLO NC, 1985, JUN IEEE DEV RES C B

[4] CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERISTICS OF MOLECULAR-BEAM EPITAXIALLY GROWN P+-GAAS/AIAS/N-GAAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (05) : 365 - 366

[5] MODULATION-DOPED (AL,GA)AS/ALAS SUPERLATTICE - ELECTRON-TRANSFER INTO ALAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 284 - 286

[6] SELECTIVELY DOPED HETEROSTRUCTURE FREQUENCY-DIVIDERS [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 377 - 379

[7] LINH NT, 1982, DEC IEDM, P582

[8] NICOLLIAN EH, 1982, MOS METAL OXIDE SEMI, P374

[9] PHOTOSENSITIVE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AIGAAS/GAAS HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 638 - 640

[10] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1015 - 1027