DEFECT CONTROL DURING SOLID-PHASE EPITAXIAL-GROWTH OF SIGE ALLOY LAYERS

A systematic study of the processing procedures required for minimizing structural defects generated during the solid phase epitaxial (SPE) growth of SiGe alloy layers is described. It includes high dose Ge implantation into Si at liquid nitrogen temperature (LNT), sequential carbon implantation, and an 800-degrees-C anneal. The LNT implantation step considerably reduces the density of end-of-range (EOR) defects relative to that found in SPE grown SiGe layers implanted at room temperature, while the sequential implantation of carbon ions before annealing effectively suppresses the formation of stacking faults that are found to form at a threshold peak concentration of about 6 at. % Ge in the absence of carbon.