LATERAL SCALING EFFECTS ON HIGH-CURRENT TRANSIENTS IN SUBMICROMETER BIPOLAR-TRANSISTORS

被引：5

作者：

HAMASAKI, T

WADA, T

SHIGYO, N

YOSHIMI, M

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期

关键词：

D O I：

10.1109/16.7363

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1620 / 1626

页数：7

共 23 条

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