NOVEL DIFFUSION PHENOMENON OF DOPANTS IN SILICON AT LOW-TEMPERATURES

被引：13

作者：

WITTMER, M ^{[1
]}

FAHEY, P ^{[1
]}

SCILLA, GJ ^{[1
]}

IYER, SS ^{[1
]}

TEJWANI, M ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 66卷 / 05期

关键词：

D O I：

10.1103/PhysRevLett.66.632

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present the first experimental observation of an asymmetric diffusion behavior of dopant atoms in silicon. Point defects were injected into the silicon by formation of the silicide compound Pd2Si at 200-degrees-C. This flux of point defects led to an asymmetric broadening of a narrow buried layer of dopant atoms, with diffusion occurring preferentially towards the silicide/silicon interface. The asymmetric diffusion behavior of the dopant atoms is a general phenomenon since we observed it for n- as well as p-type dopants. We discuss several mechanisms that could be responsible for this new diffusion phenomenon.

引用

页码：632 / 635

页数：4

共 14 条

[1]

Anthony T.R., 1975, DIFFUS SOLIDS, P353

[2] MICROSCOPIC THEORY OF IMPURITY-DEFECT REACTIONS AND IMPURITY DIFFUSION IN SILICON [J].