POINT-DEFECT GENERATION AND ENHANCED DIFFUSION IN SILICON DUE TO TANTALUM SILICIDE OVERLAYS

被引：48

作者：

HU, SM

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.98452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：308 / 310

页数：3

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