FORMATION OF EPITAXIAL NISI2 OF SINGLE ORIENTATION ON(111) SI INSIDE MINIATURE SIZE OXIDE OPENINGS

被引：30

作者：

CHANG, CS

NIEH, CW

CHEN, LJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 05期

关键词：

D O I：

10.1063/1.98218

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：259 / 261

页数：3

共 14 条

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[6] CORRELATION OF SCHOTTKY-BARRIER HEIGHT AND MICROSTRUCTURE IN THE EPITAXIAL NI SILICIDE ON SI(111) [J].

LIEHR, M ;

SCHMID, PE ;

LEGOUES, FK ;

HO, PS .

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[7] PROBLEMS WITH ULTRAMINIATURIZED TRANSISTORS [J].

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[8]

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