DIELECTRIC FUNCTIONS OF THIN INTERFACE LAYERS IN A-SI-H-BASED DEVICE STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY

被引：7

作者：

COLLINS, RW ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT PHYS,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷

关键词：

D O I：

10.1016/0022-3093(89)90099-9

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：160 / 162

页数：3

相关论文

共 4 条

[1] INFLUENCE OF THE SUBSTRATE ON THE EARLY STAGE OF THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON EVIDENCED BY KINETIC ELLIPSOMETRY
ANTOINE, AM
DREVILLON, B
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (02) : 360 - 367
[2] AN ELLIPSOMETRY STUDY OF A HYDROGENATED AMORPHOUS-SILICON BASED N-I STRUCTURE
COLLINS, RW
CLARK, AH
GUHA, S
HUANG, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) : 4566 - 4571
[3] COLLINS RW, 1988, AMORPHOUS SILICON RE, VB, P1003
[4] A REAL-TIME ELLIPSOMETRY STUDY OF THE GROWTH OF AMORPHOUS-SILICON ON TRANSPARENT CONDUCTING OXIDES
KUMAR, S
DREVILLON, B
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (08) : 3023 - 3034