INTERFACIAL POLARIZATION IN AL-Y2O3-SIO2-SI CAPACITOR

被引：4

作者：

LING, CH

机构：

[1] National Univ of Singapore, Kent Ridge Singapore, Singapore

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 19期

关键词：

CAPACITORS; DIELECTRIC MATERIALS;

D O I：

10.1049/el:19931115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The variation by a factor of 2 in the observed permittivity of yttrium oxide film is explained in terms of interfacial polarisation based on the Y2O3/SiO2 double-layer model. Provided the dielectric relaxation time constants of the two layers are grossly dissimilar, the model can also explain the frequency independence of the composite capacitor.

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收藏

页码：1676 / 1678

页数：3

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