ENERGY-STORAGE IN QUANTUM-WELL LASERS

被引：4

作者：

CHEN, YC

WANG, P

WATERS, RG

LEE, KK

机构：

[1] MCDONNELL DOUGLAS ELECTR SYST CO,CTR OPTOELECTR,ELMSFORD,NY 10523

[2] UNIV COLORADO,DEPT ELECT & COMP ENGN,COLORADO SPRINGS,CO 80933

来源：

OPTICS LETTERS | 1990年 / 15卷 / 19期

关键词：

D O I：

10.1364/OL.15.001073

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A new scheme of energy storage in single-quantum-well semiconductor lasers is analyzed. This scheme involves the storage of the majority of injected carriers in the continuum states of the surrounding bulk material, in which the carrier density is diluted and the higher-order carrier-density-dependent recombination processes are much smaller. This allows the inversion level to build up to a much higher level during the pumping stage of Q switching. The possibility of using indirect-band-gap semiconductors for carrier storage is also proposed. © 1990 Optical Society of America.

引用

页码：1073 / 1075

页数：3

共 19 条

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