LIGHT-EMISSION FROM POROUS SILICON

被引:7
作者
BANERJEE, S
机构
[1] Tata Institute of Fundamental Research, Bombay, 400 005, Homi Bhabha Road
关键词
POROUS SILICON; LUMINESCENCE; OPTOELECTRONIC MATERIALS;
D O I
10.1007/BF02757899
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Room-temperature visible luminescence observed in porous silicon is one of the most significant discoveries of this decade as it opens up the possibility of silicon-based optoelectronics afresh. The exact mechanism of this different luminescence behaviour of porous silicon, compared to crystalline silicon, is not well established. In this paper results of a combination of infrared absorption, and photoluminescence emission and excitation spectroscopies will be described to show that the nanocrystallite nature of porous silicon and chemical environment at the surface are the important aspects of this novel luminescence behaviour.
引用
收藏
页码:533 / 550
页数:18
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