FORMATION OF EPITAXIAL COSI2 ON SI(100) - ROLE OF THE ANNEALING AMBIENT

被引：23

作者：

VANTOMME, A ^{[1
]}

NICOLET, MA ^{[1
]}

BAI, G ^{[1
]}

FRASER, DB ^{[1
]}

机构：

[1] INTEL CORP,SANTA CLARA,CA 95052

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 03期

关键词：

D O I：

10.1063/1.108978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

With a thin Ti layer interposed between a Si(100) substrate and a Co overlayer, the inversion of the Co and Ti films and the formation of a partly relaxed epitaxial CoSi2 layer on Si (100) can be obtained by steady-state annealing in inert as well as reactive ambients. A reactive ambient chemically binds the Ti near the surface as an oxide or nitride layer, which preserves the bilayer structure during a high temperature treatment. In a nonreactive ambient, the Ti and CoSi2 layers react further, resulting in a uniform layer of Co0.25Ti0.75Si2 and CoSi2. An eptiaxial orientation of CoSi2 is retained even in that case.

引用

页码：243 / 245

页数：3

共 8 条

[1] STRAIN IN EPITAXIAL COSI2 FILMS ON SI (111) AND INFERENCE FOR PSEUDOMORPHIC GROWTH [J].