ARSENIC DIFFUSION IN SILICON FROM DOPED POLYCRYSTALLINE SILICON

被引：12

作者：

MUROTA, J ^{[1
]}

ARAI, E ^{[1
]}

KOBAYASHI, K ^{[1
]}

KUDO, K ^{[1
]}

机构：

[1] IBARAKI ELECT COMMUNICAT LAB,TOKAI,IBARAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 02期

关键词：

D O I：

10.1143/JJAP.17.457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：457 / 458

页数：2

共 9 条

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FAIR, RB ;

WEBER, GR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :273-279

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TSAI, JCC .

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SCHMIDT, S .

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[4] PHOSPHORUS AND ARSENIC DIFFUSIONS FROM DOPED POLYCRYSTALLINE SILICON [J].

IKUSHIMA, Y ;

KAMOSHIDA, M .

DENKI KAGAKU, 1976, 44 (02) :95-102

[5] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

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[6] CONCENTRATION DEPENDENT DIFFUSION OF ARSENIC IN SILICON [J].

KENNEDY, DP ;

MURLEY, PC .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (02) :335-+

[7] ELECTRICAL AND BACKSCATTERING MEASUREMENTS OF ARSENIC IMPLANTED SILICON [J].

MULLER, H ;

KRANZ, H ;

RYSSEL, H ;

SCHMID, K .

APPLIED PHYSICS, 1974, 4 (02) :115-123

[8] STEPPED ELECTRODE TRANSISTOR - SET [J].

SAKAI, T ;

SUNOHARA, Y ;

SAKAKIBARA, Y ;

MUROTA, J .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 :43-46

[9]

TAKAGI M, 1973, J JAPAN SOC APP S101, V42

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