PHOSPHORUS AND ARSENIC DIFFUSIONS FROM DOPED POLYCRYSTALLINE SILICON

被引：3

作者：

IKUSHIMA, Y ^{[1
]}

KAMOSHIDA, M ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,DIV IC,NAKAHARA KU,KAWASAKI,JAPAN

来源：

DENKI KAGAKU | 1976年 / 44卷 / 02期

关键词：

D O I：

10.5796/kogyobutsurikagaku.44.95

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：95 / 102

页数：8

共 24 条

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[3]

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[8] PROFILE ESTIMATION OF HIGH-CONCENTRATION ARSENIC DIFFUSIONS IN SILICON [J].

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[9] RELATIONSHIP BETWEEN RESISTIVITY AND TOTAL ARSENIC CONCENTRATION IN HEAVILY DOPED N-TYPE AND P-TYPE SILICON [J].

FAIR, RB ;

WEBER, GR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :280-282

[10] EFFECT OF COMPLEX-FORMATION ON DIFFUSION OF ARSENIC IN SILICON [J].

FAIR, RB ;

WEBER, GR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) :273-279

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