NOISE CHARACTERISTICS OF N-CHANNEL DEEP-DEPLETION MODE MOS-TRANSISTORS

被引：8

作者：

CARRUTHERS, C ^{[1
]}

MAVOR, J ^{[1
]}

机构：

[1] UNIV EDINBURGH,DEPT ELECT ENGN,EDINBURGH EH9 3JL,MIDLOTHIAN,SCOTLAND

来源：

IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS | 1992年 / 139卷 / 03期

关键词：

SIGNAL PROCESSING; TRANSISTORS; NOISE AND INTERFERENCE;

D O I：

10.1049/ip-g-2.1992.0061

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The potential of deep-depletion MOS transistors for a low-noise, analogue signal-processing application is investigated in this paper. These are predicted to have a favourable noise performance, because a buried depletion layer in this transistor structure can be induced between its conduction channel and the SiO2-Si interface noise mechanisms, which dominate a surface-channel device. Measurements for n-channel depletion-mode MOS transistors formed on p-type [100] orientation silicon substrates are presented. Under certain bias conditions these devices exhibit a significant reduction in the low-frequency noise performance over conventional, surface-channel MOS structures. A BiCMOS cascode buffer circuit is proposed, which yields a favourable noise performance for infra-red, focal-plane signal-processing applications.

引用

页码：377 / 383

页数：7

共 22 条

[1]

BEYNON JDE, 1980, CHARGE COUPLED DEVIC

[2] CURRENT READOUT OF INFRARED DETECTORS [J].

BLUZER, N ;

JENSEN, AS .

OPTICAL ENGINEERING, 1987, 26 (03) :241-248

[3]

Burstein E., 1957, SEMICONDUCTOR SURFAC

[4]

CARRUTHERS C, 1990, THESIS U EDINBURGH

[5]

CHANG RWS, 1989, LANCET, V2, P143

[6] LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].

CHRISTEN.S ;

LUNDSTRO.I ;

SVENSSON, C .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :797-&

[7] LOW FREQUENCY NOISE IN MOS TRANSISTORS .2. EXPERIMENTS [J].

CHRISTEN.S ;

LUNDSTRO.I .

SOLID-STATE ELECTRONICS, 1968, 11 (09) :813-&

[8]

DETTMER R, 1987, IEE ELECTRON POW AUG, P499

[9]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

[10] THE EXCESS NOISE IN BURIED-CHANNEL MOS-TRANSISTORS [J].

HAYAT, SA ;

JONES, BK .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (11) :732-735

← 1 2 3 →