CURRENT READOUT OF INFRARED DETECTORS

被引:46
作者
BLUZER, N
JENSEN, AS
机构
关键词
D O I
10.1117/12.7974057
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:241 / 248
页数:8
相关论文
共 8 条
[1]   BUFFERED DIRECT INJECTION OF PHOTOCURRENTS INTO CHARGE-COUPLED-DEVICES [J].
BLUZER, N ;
STEHLIK, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :160-166
[2]  
BLUZER N, 1985, Patent No. 4559638
[3]   ORIGIN OF 1/F NOISE OBSERVED IN HG0.7CD0.3TE VARIABLE AREA PHOTODIODE ARRAYS [J].
CHUNG, HK ;
ROSENBERG, MA ;
ZIMMERMANN, PH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :189-191
[4]   INFRARED FOCAL PLANES IN INTRINSIC SEMICONDUCTORS [J].
LONGO, JT ;
CHEUNG, DT ;
ANDREWS, AM ;
WANG, CC ;
TRACY, JM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :213-232
[5]   1/F NOISE IN ION-IMPLANTED AND DOUBLE-LAYER EPITAXIAL HGCDTE PHOTODIODES [J].
RADFORD, WA ;
JONES, CE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :183-188
[7]   NOISE ASSOCIATED WITH CHARGE INJECTION INTO A CCD BY CURRENT INTEGRATION THROUGH A MOS-TRANSISTOR [J].
REIMBOLD, G .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) :871-873
[8]   1-F NOISE IN (HG,CD)TE PHOTO-DIODES [J].
TOBIN, SP ;
IWASA, S ;
TREDWELL, TJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :43-48