ION-BEAM INDUCED OXIDATION OF SILICON

被引：15

作者：

HOLMEN, G

JACOBSSON, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 19期

关键词：

D O I：

10.1063/1.100370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1838 / 1840

页数：3

共 12 条

[1] THEORY OF THE OXIDATION OF METALS [J].

CABRERA, N ;

MOTT, NF .

REPORTS ON PROGRESS IN PHYSICS, 1948, 12 :163-184

[2]

DAVIES EA, 1987, PHILOS MAG B, V55

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[4]

Fehlner F. P., 1970, OXID MET, V2, P59

[5]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[6] OXYGEN ADSORPTION ON SILICON AND GERMANIUM [J].

HAGSTRUM, HD .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (06) :1020-&

[7] ATOMIC OXYGEN AND THE THERMAL-OXIDATION OF SILICON [J].

HOFF, AM ;

RUZYLLO, J .

APPLIED PHYSICS LETTERS, 1988, 52 (15) :1264-1265

[8]

HOLMEN G, UNPUB

[9] ASPECTS OF THE THEORETICAL DESCRIPTION OF BALLISTIC ATOMIC MIXING [J].

LITTMARK, U .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :684-693

[10] THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICON [J].

MORGAN, AE ;

DEGREFTE, HAM ;

WARMOLTZ, N ;

WERNER, HW ;

TOLLE, HJ .

APPLIED SURFACE SCIENCE, 1981, 7 (04) :372-392

← 1 2 →