GAAS-SI DOUBLE-HETEROSTRUCTURE LEDS

[11] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 221 - +

[12] REDUCED DISLOCATION DENSITIES IN LIQUID PHASE EPITAXY LAYERS BY INTERMITTENT GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 793 - &

[13] EFFECT OF PARTIAL DISSOLUTION DURING LPE GROWTH OF ALXGA1-XAS ON EFFICIENCY OF DIFFUSED LIGHT-EMITTING DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) : 1631 - &

[14] Sommerdijk JL, 1971, J LUMIN, V4, P441

[15] SILICON-DOPED GALLIUM ARSENIDE GROWN FROM GALLIUM SOLUTION - SILICON SITE DISTRIBUTION [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4200 - &

[16] GRADED-GAP ALXGA1-XAS-GAAS HETEROJUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4129 - &

[11] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 221 - +

[12] REDUCED DISLOCATION DENSITIES IN LIQUID PHASE EPITAXY LAYERS BY INTERMITTENT GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) : 793 - &

[13] EFFECT OF PARTIAL DISSOLUTION DURING LPE GROWTH OF ALXGA1-XAS ON EFFICIENCY OF DIFFUSED LIGHT-EMITTING DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (10) : 1631 - &

[14] Sommerdijk JL, 1971, J LUMIN, V4, P441

[15] SILICON-DOPED GALLIUM ARSENIDE GROWN FROM GALLIUM SOLUTION - SILICON SITE DISTRIBUTION [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) : 4200 - &

[16] GRADED-GAP ALXGA1-XAS-GAAS HETEROJUNCTION [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4129 - &