A Review of Epitaxial Metal-Nitride Films by Polymer-Assisted Deposition

被引：18

作者：

Luo, Hongmei ^{[1
]}

Wang, Haiyan ^{[2
]}

Zou, Guifu ^{[3
]}

Bauer, Eve ^{[3
]}

McCleskey, Thomas M. ^{[3
]}

Burrell, Anthony K. ^{[3
]}

Jia, Quanxi ^{[3
]}

机构：

[1] New Mexico State Univ, Dept Chem Engn, Las Cruces, NM 88003 USA

[2] Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA

[3] Los Alamos Natl Lab, Mat Phys & Applicat Div, Los Alamos, NM 87545 USA

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2010年 / 11卷 / 02期

关键词：

Nitride; Film; Solution; Polymer; Deposition;

D O I：

10.4313/TEEM.2010.11.2.054

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polymer-assisted deposition is a chemical solution route to high quality thin films. In this process, the polymer controls the viscosity and binds metal ions, resulting in a homogeneous distribution of metal precursors in the solution and the formation of crack-free and uniform films after thermal treatment. We review our recent effort to epitaxially grow metal-nitride thin films, such as hexagonal GaN, cubic TiN, AlN, NbN, and VN, mixed-nitride Ti(1)xAlxN, ternary nitrides tetragonal SrTiN2, BaZrN2, and BaHfN2, hexagonal FeMoN2, and nanocomposite TiN-BaZrN2.

引用

页码：54 / 60

页数：7

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