CHARACTERIZATION OF INCOMPLETE ACTIVATION OF HIGH-DOSE BORON IMPLANTS IN SILICON

被引:38
作者
SCHWETTM.FN [1 ]
机构
[1] TEXAS INSTR INC, DALLAS, TX 75222 USA
关键词
D O I
10.1063/1.1663519
中图分类号
O59 [应用物理学];
学科分类号
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页码:1918 / 1920
页数:3
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