SURFACE-STATES ON GALLIUM-PHOSPHIDE

被引：35

作者：

NORMAN, D

MCGOVERN, IT

NORRIS, C

机构：

[1] UNIV LEICESTER, DEPT PHYS, LEICESTER LE1 7RH, W YORKSHIRE, ENGLAND

[2] NEW UNIV ULSTER, SCH PHYS SCI, COLERINE BT52 1SA, LONDONDERRY, NORTH IRELAND

来源：

PHYSICS LETTERS A | 1977年 / 63卷 / 03期

关键词：

D O I：

10.1016/0375-9601(77)90940-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：384 / 386

页数：3

共 18 条

[11] INTRINSIC SURFACE STATES OF (110) SURFACES OF GROUP IV AND III-V SEMICONDUCTORS
JOANNOPOULOS, JD
COHEN, ML
[J]. PHYSICAL REVIEW B, 1974, 10 (12): : 5075 - 5081
[12] ANGLE-RESOLVED PHOTOEMISSION STUDIES OF SURFACE-STATES ON (110) GAAS
KNAPP, JA
LAPEYRE, GJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 757 - 760
[13] EVIDENCE FOR A SURFACE-STATE EXCITON ON GAAS(110)
LAPEYRE, GJ
ANDERSON, J
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (02) : 117 - 120
[14] SELF-CONSISTENT ELECTRONIC STATES FOR RECONSTRUCTED SI VACANCY MODELS
LOUIE, SG
SCHLUTER, M
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 13 (04): : 1654 - 1663
[15] SYNCHROTRON RADIATION STUDIES OF ELECTRONIC-STRUCTURE AND SURFACE-CHEMISTRY OF GAAS, GASB, AND INP
SPICER, WE
LINDAU, I
GREGORY, PE
GARNER, CM
PIANETTA, P
CHYE, PW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 780 - 785
[16] PHOTOEMISSION STUDIES OF SURFACE AND INTERFACE STATES ON 3-5 COMPOUNDS
SPICER, WE
CHYE, PW
GREGORY, PE
SUKEGAWA, T
BABALOLA, IA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 233 - 240
[17] ELECTRON-HOLE INTERACTION OF D-CORE LEVELS IN 3-V SEMICONDUCTORS
THIRY, P
PETROFF, Y
PINCHAUX, R
CHELIKOXSKY, JR
COHEN, ML
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (12) : 1107 - 1109
[18] INVESTIGATION OF ELECTRONIC-STRUCTURE OF GASE AND GATE BY PHOTOELECTRON-SPECTROSCOPY, USING A SYNCHROTRON SOURCE, AND ELECTRON-ENERGY LOSS SPECTROSCOPY
WILLIAMS, RH
MCGOVERN, IT
MURRAY, RB
HOWELLS, M
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 73 (01): : 307 - 316

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