HOMOGENEOUS GAS-PHASE NUCLEATION IN SILANE PYROLYSIS

被引:55
作者
SLOOTMAN, F
PARENT, JC
机构
[1] Air Liquide, Centre de Recherche Claude-Delorme, 78350 Jouy-en-Josas
关键词
D O I
10.1016/0021-8502(94)90178-3
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Dilute and particle free mixtures of silane in the range of 100 ppm to 10% by volume in different carrier gases were decomposed thermally in a tube reactor, The onset of homogeneous nucleation was determined as a function of temperature and silane concentration for each carrier gas using a CNC with a detection limit of ca 0.01 mum. The gaseous decomposition by-products, disilane, trisilane and hydrogen were measured simultaneously using gas-phase chromatography. The onset of gas-phase nucleation was found to be inversely proportional to the temperature and influenced by the nature of the carrier gas. In inert gases, no chemical reaction took place between the decomposition products of silane and the carrier gas. In hydrogen, equilibrium displacement with the primary decomposition product (SiH2) lead to a retardation of particle formation. Thus, the temperatures of onset of gas-phase nucleation was higher for mixtures in hydrogen than for mixtures in inert gases.
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页码:15 / 21
页数:7
相关论文
共 22 条
[1]   GAS-PHASE SILICON ATOMS IN SILANE CHEMICAL VAPOR-DEPOSITION - LASER-EXCITED FLUORESCENCE MEASUREMENTS AND COMPARISONS WITH MODEL PREDICTIONS [J].
BREILAND, WG ;
HO, P ;
COLTRIN, ME .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1505-1513
[2]   COMPARISONS BETWEEN A GAS-PHASE MODEL OF SILANE CHEMICAL VAPOR-DEPOSITION AND LASER-DIAGNOSTIC MEASUREMENTS [J].
BREILAND, WG ;
COLTRIN, ME ;
HO, P .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) :3267-3273
[3]  
COLTRIN ME, 1986, J ELECTROCHEM SOC, V133, P1026
[4]  
EVERSTEIJN FC, 1971, PHILIPS RES REP, V26, P134
[5]  
FRENKLACH M, 1989, CERAMIC POWDER SCI, V3
[6]   GAS-PHASE KINETICS IN THE ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SILANE AND DISILANE [J].
GIUNTA, CJ ;
MCCURDY, RJ ;
CHAPPLESOKOL, JD ;
GORDON, RG .
JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) :1062-1075
[7]   OBSERVATION OF SI2 IN A CHEMICAL VAPOR-DEPOSITION REACTOR BY LASER-EXCITED FLUORESCENCE [J].
HO, P ;
BREILAND, WG .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :51-53
[8]   SILICON CHEMICAL VAPOR-DEPOSITION ONE-STEP AT A TIME - FUNDAMENTAL-STUDIES OF SILICON HYDRIDE CHEMISTRY [J].
JASINSKI, JM ;
GATES, SM .
ACCOUNTS OF CHEMICAL RESEARCH, 1991, 24 (01) :9-15
[9]  
KASPER G, 1988, HDB CONTAMINATION CO
[10]   SILANE PYROLYSIS RATES FOR THE MODELING OF CHEMICAL VAPOR-DEPOSITION [J].
MEYERSON, BS ;
JASINSKI, JM .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (02) :785-787