DETRIMENTAL INFLUENCE OF STACKING-FAULTS ON THE REFRESH TIME OF MOS MEMORIES

被引：25

作者：

STRACK, H

MAYER, KR

KOLBESEN, BO

机构：

[1] Simens AG, 8000 Munich 80

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 02期

关键词：

D O I：

10.1016/0038-1101(79)90105-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reverse current of diodes and the storage capability of MOS capacitors were investigated and the detrimental influence of stacking faults in the respective active area is demonstrated. In the case of the relaxation time of MOS capacitors it is shown that their deterioration can be related to the number of the stacking faults in the MOS capacitors resulting in a deterioration of the refresh behaviour of dynamic memories. The influence of one single stacking fault on the dynamic behaviour of a MOS capacitor is demonstrated. From transmission electron microscopy (TEM) and neutron activation analysis it is concluded that stacking faults decorated by Cu or Fe are most harmful to the refresh behaviour. © 1979.

引用

页码：135 / +

页数：1

共 12 条

[1]

CLAEYS CL, 1977, SEMICONDUCTOR SILICO, P773

[2]

FOLL H, 1977, SEMICONDUCTOR SILICO, P740

[3] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J].