COMPARISON BETWEEN INTERMEDIATE-ION-BOMBARDMENT-INDUCED AND HEAVY-ION-BOMBARDMENT-INDUCED SILICON AMORPHIZATION AT ROOM-TEMPERATURE

被引：15

作者：

CLAVERIE, A

VIEU, C

FAURE, J

BEAUVILLAIN, J

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 2卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(89)90083-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：99 / 104

页数：6

共 13 条

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