PROXIMITY EFFECT CORRECTION FOR HIGH-VOLTAGE ELECTRON-BEAM LITHOGRAPHY

[11] PROXIMITY CORRECTION ON THE AEBLE-150 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 443 - 447

[12] CORRECTIONS TO PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY .1. THEORY [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4371 - 4377

[13] PARIKH M, 1979, J APPL PHYS, V19, P4378

[14] PARIKH M, 1979, J APPL PHYS, V19, P4383

[15] PROXIMITY EFFECT CORRECTION CALCULATIONS BY THE INTEGRAL-EQUATION APPROXIMATE SOLUTION METHOD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 159 - 163

[16] PFEIFFER HC, 1971, 11TH P S EL ION LAS, P239

[17] RALF HK, 1982, 10TH INT C EL ION BE, P219

[18] SUZUKI K, 1983, JPN J APPL PHYS S, V22, P175

[19] Takigawa T., 1983, Microelectronic Engineering, V1, P121, DOI 10.1016/0167-9317(83)90025-4

[20] A HIGH-DOSE AND HIGH-ACCURACY VARIABLE SHAPED ELECTRON-BEAM EXPOSURE SYSTEM FOR QUARTERMICRON DEVICE FABRICATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 70 - 74

[11] PROXIMITY CORRECTION ON THE AEBLE-150 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 443 - 447

[12] CORRECTIONS TO PROXIMITY EFFECTS IN ELECTRON-BEAM LITHOGRAPHY .1. THEORY [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4371 - 4377

[13] PARIKH M, 1979, J APPL PHYS, V19, P4378

[14] PARIKH M, 1979, J APPL PHYS, V19, P4383

[15] PROXIMITY EFFECT CORRECTION CALCULATIONS BY THE INTEGRAL-EQUATION APPROXIMATE SOLUTION METHOD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (01): : 159 - 163

[16] PFEIFFER HC, 1971, 11TH P S EL ION LAS, P239

[17] RALF HK, 1982, 10TH INT C EL ION BE, P219

[18] SUZUKI K, 1983, JPN J APPL PHYS S, V22, P175

[19] Takigawa T., 1983, Microelectronic Engineering, V1, P121, DOI 10.1016/0167-9317(83)90025-4

[20] A HIGH-DOSE AND HIGH-ACCURACY VARIABLE SHAPED ELECTRON-BEAM EXPOSURE SYSTEM FOR QUARTERMICRON DEVICE FABRICATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 70 - 74