NEARLY IDEAL CHARACTERISTICS OF GAAS METAL-INSULATOR-SEMICONDUCTOR DIODES BY ATOMIC LAYER PASSIVATION

被引：15

作者：

WADA, Y

WADA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3084 / 3089

页数：6

共 36 条

[11] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J].

HICKMOTT, TW ;

SOLOMON, PM ;

FISCHER, R ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2844-2853

[12] MONO-CRYSTALLINE ALUMINUM OHMIC CONTACT TO N-GAAS BY H2S ADSORPTION [J].

MASSIES, J ;

CHAPLART, J ;

LAVIRON, M ;

LINH, NT .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :693-695

[13]

MATSUO S, 1985, APPL SOLID STATE C S, V2, P75

[14]

Meiners L. G., 1988, Material Science Reports, V3, P139, DOI 10.1016/S0920-2307(88)80008-2

[15] ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE [J].

MEINERS, LG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1402-1407

[16] ENHANCED ELECTRONIC-PROPERTIES OF GAAS-SURFACES CHEMICALLY PASSIVATED BY SELENIUM REACTIONS [J].

SANDROFF, CJ ;

HEGDE, MS ;

FARROW, LA ;

BHAT, R ;

HARBISON, JP ;

CHANG, CC .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) :586-588

[17] OXIDE-SUBSTRATE AND OXIDE-OXIDE CHEMICAL-REACTIONS IN THERMALLY ANNEALED ANODIC FILMS ON GASB, GAAS, AND GAP [J].

SCHWARTZ, GP ;

GUALTIERI, GJ ;

GRIFFITHS, JE ;

THURMOND, CD ;

SCHWARTZ, B .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (11) :2488-2499

[18] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

SPICER, WE ;

CHYE, PW ;

SKEATH, PR ;

SU, CY ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1422-1433

[19] SULFUR PASSIVATION OF GAAS-SURFACES - A MODEL FOR REDUCED SURFACE RECOMBINATION WITHOUT BAND FLATTENING [J].

SPINDT, CJ ;

SPICER, WE .

APPLIED PHYSICS LETTERS, 1989, 55 (16) :1653-1655

[20]

SUGINO T, 1990, DEFECT CONTROL SEMIC, P849

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