NEARLY IDEAL CHARACTERISTICS OF GAAS METAL-INSULATOR-SEMICONDUCTOR DIODES BY ATOMIC LAYER PASSIVATION

被引：15

作者：

WADA, Y

WADA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3084 / 3089

页数：6

共 36 条

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