RELAXATION OF GAAS SURFACE BAND BENDING BY ATOMIC LAYER PASSIVATION

被引：4

作者：

WADA, Y

WADA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.586976

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs surface passivation by several atomic layers of InP is presented. The deposition of an atomically thin InP layer on n- and p-type (100) GaAs by chemical vapor deposition shows very strong enhancement in photoluminescence intensity and a remarkable reduction in surface band bending determined by Hall effect measurements. The surface modification effect is very stable, and evidence suggests that the oxidation of InP plays an important role in this passivation mechanism. These results indicates that atomically thin InP layer is very effective for the surface passivation of GaAs.

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页码：1598 / 1602

页数：5

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