BAND-LIKE AND LOCALIZED STATES AT EXTENDED DEFECTS IN SILICON

被引：175

作者：

SCHROTER, W ^{[1
]}

KRONEWITZ, J ^{[1
]}

GNAUERT, U ^{[1
]}

RIEDEL, F ^{[1
]}

SEIBT, M ^{[1
]}

机构：

[1] UNIV GOTTINGEN, SONDERFORSCHUNGSBEREICH 345, D-37073 GOTTINGEN, GERMANY

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.52.13726

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that electronic states at extended defects in semiconductors can be classified as bandlike or localized using deep-level transient spectroscopy (DLTS), when electron equilibration at the defect is taken into account. We compare computer simulations of DLTS with data for 60 degrees dislocations and for NiSi2 platelets in silicon and find narrow point defect clouds in the first and a two-dimensional metal or a metal ring in the second example.

引用

页码：13726 / 13729

页数：4

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