CONDUCTION PROCESS IN PYROLYTICALLY DEPOSITED SIO2-FILMS

被引：6

作者：

POPOVA, LI ^{[1
]}

ANTOV, BZ ^{[1
]}

VITANOV, PK ^{[1
]}

机构：

[1] INST MICROELECTR,SOFIA 1113,BULGARIA

来源：

THIN SOLID FILMS | 1976年 / 38卷 / 03期

关键词：

D O I：

10.1016/0040-6090(76)90003-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：247 / 253

页数：7

共 11 条

[1] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON [J].

DEAL, BE ;

FLEMING, PJ ;

CASTRO, PL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) :300-&

[2] THEORY OF THERMAL DIELECTRIC-RELAXATION AND DIRECT DETERMINATION OF TRAP PARAMETERS [J].

GUPTA, HM ;

OVERSTRA.RJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1974, 7 (19) :3560-3572

[3] POOLE-FRENKEL CONDUCTION IN AMORPHOUS SOLIDS [J].

HILL, RM .

PHILOSOPHICAL MAGAZINE, 1971, 23 (181) :59-&

[4] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

[5] VAPOR-DEPOSITED SILICON DIOXIDE FOR DEVICE APPLICATIONS [J].

LEUENBERGER, F .

THIN SOLID FILMS, 1974, 22 (03) :245-253

[6] C-V AND IV CHARACTERISTICS OF MIS STRUCTURES WITH PYROLYTIC SIO2 AS DIELECTRIC [J].

POPOVA, LI ;

VITANOV, PK ;

ANTOV, BZ .

THIN SOLID FILMS, 1974, 23 (01) :15-22

[7] DIELECTRIC-RELAXATION AND ITS EFFECT ON THERMAL ELECTRIC CHARACTERISTICS OF INSULATORS [J].

SIMMONS, JG ;

TAYLOR, GW .

PHYSICAL REVIEW B, 1972, 6 (12) :4804-4814

[8] DIELECTRIC-RELAXATION AND ITS EFFECT ON ISOTHERMAL ELECTRICAL CHARACTERISTICS OF DEFECT INSULATORS [J].

SIMMONS, JG ;

TAYLOR, GW .

PHYSICAL REVIEW B, 1972, 6 (12) :4793-4803

[9] CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS [J].

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2951-+

[10] METHOD FOR DETERMINATION OF HIGH-FIELD CONDUCTION LAWS IN INSULATING FILMS IN PRESENCE OF CHARGE TRAPPING [J].

WALDEN, RH .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1178-+

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