PRINCIPLES OF PLASMA-ACTIVATED CHEMICAL VAPOR-DEPOSITION

被引:20
作者
INSPEKTORKOREN, A
机构
关键词
D O I
10.1016/0257-8972(87)90174-5
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:31 / 48
页数:18
相关论文
共 141 条
[1]   PROGRESS IN THE APPLICATIONS OF PLASMA SURFACE MODIFICATIONS AND CORRELATIONS WITH THE CHEMICAL-PROPERTIES OF THE PLASMA PHASE [J].
AMOUROUX, J ;
GICQUEL, A ;
CAVVADIAS, S ;
MORVAN, D ;
AREFI, F .
PURE AND APPLIED CHEMISTRY, 1985, 57 (09) :1207-1222
[2]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[4]  
ANDERSSON LP, 1981, THIN SOLID FILMS, V80, P227
[5]   THE PLASMA-ASSISTED CHEMICAL VAPOR-DEPOSITION OF TIC, TIN AND TICXN1-X [J].
ARCHER, NJ .
THIN SOLID FILMS, 1981, 80 (1-3) :221-225
[6]   THE ROLE OF HYDROGEN IN THE RADICAL POLYMERIZATION MECHANISM OF HYDROCARBONS AND CHLOROSILANES IN A LOW-PRESSURE MICROWAVE PLASMA [J].
AVNI, R ;
CARMI, U ;
INSPEKTOR, A ;
ROSENTHAL, I .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (04) :1813-1820
[7]   RECENT ADVANCES IN CERAMIC COATINGS OBTAINED BY CHEMICAL VAPOR-DEPOSITION AND PLASMA PROCESSING DEPOSITION [J].
AVNI, R ;
CARMI, U .
MATERIALS SCIENCE AND ENGINEERING, 1985, 71 (1-2) :341-354
[8]  
AVNI R, 1983, 6TH P INT S PLASM CH, V2, P522
[9]  
AVNI R, 1984, NASA TP2301
[10]  
Bell A. T., 1974, Techniques and applications of plasma chemistry, P1