LOW-VOLTAGE HETERO-NIPI WAVE-GUIDE MODULATORS WITH GAAS/ALAS QUANTUM-WELLS

被引：7

作者：

YOFFE, GW ^{[1
]}

BRUBACH, J ^{[1
]}

KAROUTA, F ^{[1
]}

VANDERVLEUTEN, WC ^{[1
]}

KAUFMANN, LMF ^{[1
]}

WOLTER, JH ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT ELECT ENGN,5600 MB EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.109654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a waveguide modulator with a GaAs/AlAs multiple-quantum-well hetero-nipi core. Selective lateral ohmic contacts connect all the p-type layers together and likewise all the n-type layers. A small applied voltage creates a large change in the field across each thin undoped quantum well region, causing large changes in the absorption coefficient and refractive index. A 300-mum-long device gave a 10:1 modulation ratio at 1-V reverse bias with 4-dB zero-bias absorption loss. 400- and 900-mum-long devices gave a 180-degrees phase shift with negligible absorption loss at 1.5 and 0.9 V, respectively.

引用

页码：1456 / 1458

页数：3

共 8 条

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