TECHNOLOGICAL ASPECTS OF THE PREPARATION OF AU-ZN OHMIC CONTACTS TO P-TYPE INP

被引：5

作者：

MALINA, V

SCHADE, U

VOGEL, K

机构：

[1] GESELL FORDERUNG ANGEW OPT OPTOELEKTR QUANTENELEK,D-12489 BERLIN,GERMANY

[2] FERDINAND BRAUN INST HOCHSTFREQUENZTECH FORSCHUNG,D-12489 BERLIN,GERMANY

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 01期

关键词：

D O I：

10.1088/0268-1242/9/1/009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Au-Zn/Au and X/Au-Zn/Y/Au metallizations (where X = Au, Cr or Ni is a nucleation layer and Y = Cr or Ni is a diffusion barrier), formed by vacuum evaporation of Au-Zn (10 wt%) alloy, were studied for the preparation of ohmic contacts to p-type InP. The metallurgical and electrical properties of such contacts were investigated as a function of deposition parameters (especially the deposition rate of Au-Zn alloy) and alloying conditions. The role of the nucleation layer X on the InP surface and of the barrier layer Y between the Au-Zn and the outer Au layer in contact formation is also discussed.

引用

页码：49 / 53

页数：5

共 11 条

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