OPTIMIZATION AND MODELING OF AVALANCHE PHOTODIODE STRUCTURES - APPLICATION TO A NEW CLASS OF SUPERLATTICE PHOTODETECTORS, THE P-I-N, P-N HOMOJUNCTION, AND P-N HETEROJUNCTION APDS

被引：18

作者：

BRENNAN, KF ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL, MICROELECTR RES CTR, ATLANTA, GA 30332 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 08期

关键词：

D O I：

10.1109/T-ED.1987.23134

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1658 / 1669

页数：12

共 52 条

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