WAVE-GUIDING PROPERTIES OF NONSYMMETRICAL 5-LAYER LOC AND DFB LASERS

被引：4

作者：

BURKHARD, H

机构：

来源：

IEE PROCEEDINGS-J OPTOELECTRONICS | 1987年 / 134卷 / 01期

关键词：

D O I：

10.1049/ip-j.1987.0003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：7 / 10

页数：4

共 9 条

[1] EXTREMELY LOW THRESHOLD CURRENT 1.52-MU-M INGAASP/INP MS-DFB LASERS WITH 2ND-ORDER GRATING [J].

BURKHARD, H ;

KUPHAL, E ;

DINGES, HW .

ELECTRONICS LETTERS, 1986, 22 (15) :802-803

[2] OPTICAL-PROPERTIES OF IN1-XGAXP1-YASY, INP, GAAS, AND GAP DETERMINED BY ELLIPSOMETRY [J].

BURKHARD, H ;

DINGES, HW ;

KUPHAL, E .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :655-662

[3] EFFECTIVE PHASE AND GROUP INDEXES FOR IN1-XGAXP1-YASY/INP WAVEGUIDE STRUCTURES [J].

BURKHARD, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) :503-508

[4] 3-LAYER AND 4-LAYER LPE INGAAS(P) MUSHROOM STRIPE LASERS FOR LAMBDA = 130, 154, AND 166-MUM [J].

BURKHARD, H ;

KUPHAL, E .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (06) :650-657

[5] GAAS-ALXGA1-XAS HETEROSTRUCTURE LASER WITH SEPARATE OPTICAL AND CARRIER CONFINEMENT [J].

CASEY, HC ;

PANISH, MB ;

SCHLOSSE.WO ;

PAOLI, TL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) :322-333

[6] LOW-THRESHOLD CURRENT-DENSITY INGAASP/INP INJECTION-LASERS WITH 3-LAYER-WAVEGUIDE DOUBLE HETEROSTRUCTURE (JTH-CONGRUENT TO-0-5KA/CM2 AT 300-K) [J].

DRAKIN, AE ;

ELISEEV, PG ;

SVERDLOV, BN ;

DOLGINOV, LM ;

SHEVCHENKO, EG .

ELECTRONICS LETTERS, 1984, 20 (13) :559-561

[7] DISTRIBUTED BRAGG-REFLECTOR PB1-XSNXTE/PBSEYTE1-Y DIODE-LASERS [J].

KAPON, E ;

KATZIR, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (12) :1947-1957

[8] ANALYSIS OF GRATING-COUPLED RADIATION IN GAAS-GAALAS LASERS AND WAVEGUIDES [J].

STREIFER, W ;

SCIFRES, DR ;

BURNHAM, RD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (07) :422-428

[9] OPTICAL WAVEGUIDING IN (IN, GA)(AS, P) INVERTED RIB WAVEGUIDE LASERS AT 1.3-MU-M WAVELENGTH [J].

TURLEY, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (07) :1186-1195

← 1 →